Resonant states in double and triple quantum wells
نویسندگان
چکیده
منابع مشابه
Resonant tunneling in double-quantum-well triple-barrier heterostructures.
We present a low-temperature ~mK! magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled ...
متن کاملEnergy states and exchange energy of coupled double quantum dot in a magnetic field
The ground state energies of two interacting electrons confined in a coupled double quantum dot (DQD) presented in a magnetic field has been calculated by solving the relative Hamiltonian using variational and exact diagonalization methods. The singlet-triplet transitions in the angular momentum and spin of the quantum dot ground state had been shown .We have studied the magnetic field versus c...
متن کاملEnergy states and exchange energy of coupled double quantum dot in a magnetic field
The ground state energies of two interacting electrons confined in a coupled double quantum dot (DQD) presented in a magnetic field has been calculated by solving the relative Hamiltonian using variational and exact diagonalization methods. The singlet-triplet transitions in the angular momentum and spin of the quantum dot ground state had been shown .We have studied the magnetic field versus c...
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in this work, by using the particle swarm optimization the electron raman scattering for square double quantum wells is optimized. for this purpose, by combining the particle swarm algorithm together with the numerical solution procedures for equations, and also the perturbation theory we find the optimal structure that maximizes the electron raman scattering. application of this algorithm to t...
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Resonant tunneling of double-barrier quantum wells (DBQW's) affected by interface roughness has been investigated. Our results show that interface roughness induces oscillation resonant structure around the principal resonant peak. EA'ects of interface roughness on the resonant bias voltage, peak-to-valley current ratio, and the width of the principal resonant peak are also investigated. Temper...
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ژورنال
عنوان ژورنال: Journal of Physics Communications
سال: 2018
ISSN: 2399-6528
DOI: 10.1088/2399-6528/aae86a